MANUFACTURE OF AMORPHOUS SILICON SEMICONDUCTOR THIN FILM

• Main Authors: FUKUI KEITAROU, MATSUMURA MITSUO
• Format: Patent
• Language: English
• Published: 22.05.1984
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To suppress the generation of Si fine crystal particles by applying voltage for generating glow discharge across the opposing two electrodes and by applying DC voltage to the electrode where a substrate is provided. CONSTITUTION:The entire system is vacuumed as specified by an exhausting system 8, a constant amount of raw material gas is introduced into a vacuum vessel 9 through a flow control meter 7. Discharge is then generated between the electrode 1 and the electrode 3 having mesh structure by means of the electrode device 4 for glow discharge and simultaneously a prescribed positive or zero DC voltage to the electrode 2 providing the substrate 6. Thereby an Si thin film can be deposited on the substrate 2 during above process. An amorphous Si semiconductor thin film manufactured by this method can provide a high optical conductivity and low dark conductivity because generation of dangling bond is prevented by hydrogen or fluorine and the Si fine crystal is a little formed in the film.