FORMING METHOD FOR RESIST PATTERN

PURPOSE:To obtain the resist pattern of high accuracy simply by keeping a substrate to be treated at a temperature approximately same as a developer and developing the substrate. CONSTITUTION:A large number of the substrates to be treated 1 are dipped in an isothermal liquid 6, and stabilized at a f...

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Bibliographic Details
Main Author KATOU YOSHIHIDE
Format Patent
LanguageEnglish
Published 24.04.1984
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain the resist pattern of high accuracy simply by keeping a substrate to be treated at a temperature approximately same as a developer and developing the substrate. CONSTITUTION:A large number of the substrates to be treated 1 are dipped in an isothermal liquid 6, and stabilized at a fixed temperature. The substrate to be treated 1 changed into a fixed temperature is dipped in the developer 1 set at a fixed liquid temperature, and developed. Since the substrate is kept at an approximately uniform temperature, the temperature of the developer is stabilized even when the substrate is developed continuously, and the resist pattern of high accuracy can be formed on the substrate with excellent reproducibility. A gas and a solid, which do not react with a resist and are changed into a fixed temperature, may be used as a medium for a change into a fixed temperature.
Bibliography:Application Number: JP19820182177