SEMICONDUCTOR CIRCUIT

PURPOSE:To form a low threshold value when an input changes from a low to a high level and to form a high threshold value when it changes from a high to a low level, by using the 1st and the 2nd parallel circuits comprising MOSFETs, inverter circuit comprising C-MOSes, and a Schmitt circuit. CONSTIT...

Full description

Saved in:
Bibliographic Details
Main Author OBATA HIROYUKI
Format Patent
LanguageEnglish
Published 17.03.1984
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Online AccessGet full text

Cover

More Information
Summary:PURPOSE:To form a low threshold value when an input changes from a low to a high level and to form a high threshold value when it changes from a high to a low level, by using the 1st and the 2nd parallel circuits comprising MOSFETs, inverter circuit comprising C-MOSes, and a Schmitt circuit. CONSTITUTION:A P-MISFETP14 and an N-MISFETN16 form the 1st inverter circuit. A P-MISFETP14 and a P15 form the 1st parallel circuit and N-MISFETs N14, N15 form the 2nd parallel circuit. The output of the Schmitt trigger circuit 10 is opposite in phase with the input and the input/output characteristics forms a hysteresis loop. Further, gates of the FETsP14, P16, N14, N16 and the input of the Schmitt trigger circuit 10 are connected respectively to the input terminal, the output of the 1st inverter circuit is connected to an output terminal and the gate of the FETsP15, N15 is connected to the output of the Schmitt trigger circuit 10.
Bibliography:Application Number: JP19820157458