PURIFICATION OF SILICON NITRIDE

PURPOSE:To remove remaining unreacted silicon and to prepare high-purity silicon efficiently, by heat-treating crude silicon nitride in a chlorine gas (or bromine gas). CONSTITUTION:Crude silicon nitride (about 5mu particle diameter) obtained by nitriding metal silicon with a nitrogen gas, containin...

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Bibliographic Details
Main Author ITOU TAKAO
Format Patent
LanguageEnglish
Published 25.02.1984
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:PURPOSE:To remove remaining unreacted silicon and to prepare high-purity silicon efficiently, by heat-treating crude silicon nitride in a chlorine gas (or bromine gas). CONSTITUTION:Crude silicon nitride (about 5mu particle diameter) obtained by nitriding metal silicon with a nitrogen gas, containing a relatively large amount of unreacted silicon, is heat-treated in a chlorine gas atmosphere at about 430- 1,000 deg.C, and remaining Si is evaporated as SiCl4 to give purified silicon nitride. A bromine gas may be used instead of the chloride gas, and the treatment temperature is about 500-1,000 deg.C in that case.
Bibliography:Application Number: JP19820143449