TEMPERATURE DETECTING CIRCUIT OF ELECTRONIC TIMEPIECE
PURPOSE:To realize a fully integrated temperature detecting circuit by forming two kinds of resistance which generate different temperature signals on the same semiconductor substrate for a temperature detecting circuit which used a thermistor. CONSTITUTION:The temperature detecting circuit is only...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
17.10.1984
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To realize a fully integrated temperature detecting circuit by forming two kinds of resistance which generate different temperature signals on the same semiconductor substrate for a temperature detecting circuit which used a thermistor. CONSTITUTION:The temperature detecting circuit is only formed on the same semiconductor substrates monolithically by generating two kinds of different temperature signal. Namely, a switch 101 which uses a P-ch, MOSFET, or PNP bipolar transistor, resistance element 102, resistance elements 103-105 which differ in temperature signal from the resistance element 102, and inverters 106- 108 for temperature detection are arranged properly. A converting circuit 109 which performs temperature conversion from binary logical outputs of the elements 106-108 is also formed on the same semiconductor substrate. The elements 102 and 103-105 are made different in temperature precision only by using resistances which differ in temperature signal such as low-density diffused resistances, high-temperature diffused resistances, and MOS resistances. |
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Bibliography: | Application Number: JP19840052948 |