SEMICONDUCTOR DEVICE

PURPOSE:To realize a Schottky barrier diode (SBD) device, speed thereof is increased and the degree of integration thereof is improved, by forming a columnar body on a semiconductor substrate and shaping the SBD on the upper surface of the columnar body while forming a capacitor using an SBD metal a...

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Bibliographic Details
Main Author OOI SUSUMU
Format Patent
LanguageEnglish
Published 14.09.1984
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To realize a Schottky barrier diode (SBD) device, speed thereof is increased and the degree of integration thereof is improved, by forming a columnar body on a semiconductor substrate and shaping the SBD on the upper surface of the columnar body while forming a capacitor using an SBD metal and the substrate as electrodes to the peripheral side surface of the columnar body. CONSTITUTION:A silicon oxide film 12 and a first silicon nitride film 13 are formed on a silicon substrate 11, and a columnar body 14 is formed through an etching method. A silicon surface is coated with a silicon oxide film 15, and the film 15 is coated with a second silicon nitride film 16. The film 16 is left only to the side surface of the columnar body through anisotropic etching, and a thick silicon oxide film 17 is formed to a section not masked with the nitride film through thermal oxidation. The films 13, 16 are removed, a third silicon nitride film 18 is applied, the film 12 is removed, and a Schottky barrier forming metal 19 is applied. An SBD is shaped to the upper surface of the columnar body and a capacitor using the films 15, 18 as dielectrics to the side surface.
Bibliography:Application Number: JP19830037613