METHOD FOR FORMATION OF THIN FILM CRYSTAL

PURPOSE:To obtain the single crystal having a large crystal size on a substrate using a simple process by a method wherein the growing of seed crystal is simplified by forming a thin film and by having an energy to make to irradiate thereon, and a reliable and continuous crystallization is performed...

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Bibliographic Details
Main Author MORISHITA TADAYUKI
Format Patent
LanguageEnglish
Published 04.09.1984
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain the single crystal having a large crystal size on a substrate using a simple process by a method wherein the growing of seed crystal is simplified by forming a thin film and by having an energy to make to irradiate thereon, and a reliable and continuous crystallization is performed on the seed crystal. CONSTITUTION:An amorphous or polycrystalline Si film 2 is formed on the surface of a substrate 1. A narrow-widthed small region 3 is formed on the part located close to the substrate end part of the film 2, and the region 4 of the same diameter as a laser beam to be made to irradiate or a little smaller in diameter or a little smaller in diameter or thereabout is formed in such a manner that it has a fan-shaped edge having an opening angle of 5-10 degrees, for example, and it is used as a region 5 of wide region to be single-crystallized which is formed in succession to the region 4.
Bibliography:Application Number: JP19830029946