METHOD FOR LEVELING SELECTIVE EPITAXIAL GROWTH LAYER

PURPOSE:To level the device by removing projections of polycrystalline silicon growing around apertures of an insulating film in the process of silicon selective epitaxial growth. CONSTITUTION:One main plane of a silicon substrate 1 is oxidized and an oxide film 2 is grown on that. Next, apertures a...

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Bibliographic Details
Main Authors OOGA HIROTOMO, SAKURAI HIROMI
Format Patent
LanguageEnglish
Published 25.08.1984
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To level the device by removing projections of polycrystalline silicon growing around apertures of an insulating film in the process of silicon selective epitaxial growth. CONSTITUTION:One main plane of a silicon substrate 1 is oxidized and an oxide film 2 is grown on that. Next, apertures are arranged vertically on the film 2. Then the epitaxial growth is performed under low pressure thereby growing silicon 3 selectively on single crystal silicon of the apertures. Polycrystalline silicon projections 4 growing around apertures of an insulating film are removed by etching. Plasma 6 consisting of argon hits the silicon 3 and the projections 4. At this time, the argon ion concentrates on the projections 4 so that the projections 4 are etched soon.
Bibliography:Application Number: JP19830024175