LONG THIN FILM READING DEVICE

PURPOSE:To offer a reading device with fast photo-response speed, less dispersion of sensibilities among elements, long-period stability and easy manufacture method thereof. CONSTITUTION:The reading element 9 is constituted of the lower metallic electrode 5 formed on an insulating substrate 8, an am...

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Bibliographic Details
Main Authors ITOU HISAO, OZAWA TAKASHI, FUSE MARIO, NAKAMURA TAKESHI, HAMANO TOSHIHISA, TAKENOUCHI MUTSUO
Format Patent
LanguageEnglish
Published 20.05.1983
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To offer a reading device with fast photo-response speed, less dispersion of sensibilities among elements, long-period stability and easy manufacture method thereof. CONSTITUTION:The reading element 9 is constituted of the lower metallic electrode 5 formed on an insulating substrate 8, an amorphous Si layer 6 provided on said lower metallic electrode and the upper clear electrode 7 provided on the amorphous Si layer. The lower metallic electrode is arranged in a plurality to correspond to reading bits. For the material of the lower metallic electrode, Cr-An (double layer), Ni, Al, Cr, Pt, Pd, Mc, Ti, etc. are available. For the formation of the amorphous Si layer, a homogeneous film is formed be a method of plasma CVD, sputter, evaporation, etc., and thereat non-doped one or one formed into an I type layer by doping small amount of hydrogen and a P type layer with doped B and other III group element of a periodic table is appropriate. For the upper transparent electrode 7, an ITO film (In2O3+SnO2) is used, and the ratio between In2O3 and SnO2 is suitably selected. The thickness of this ITO film is suitable in approx. 500-2,000Angstrom .
Bibliography:Application Number: JP19810181781