TIME CONSTANT ELEMENT OF INTEGRATED CIRCUIT

• Main Authors: KOBORI YASUNORI, FUKUSHIMA ISAO, NISHIJIMA HIDEO
• Format: Patent
• Language: English
• Published: 27.12.1983
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

PURPOSE:To absorb dispersion of element parameters, and to perform stably pulse shaping and the signal process of the integrated circuit by a method wherein a resistor and a capacitor to constitute a time constant of MOSFET are formed to be integrated in one chip. CONSTITUTION:At one execution example, electric potential VR of a voltage control part 1 is applied to a buffer 3 and a grounding resistor 4, the current IR thereof is converted 5 into a current IC by the conversion ratio N, and is applied to a grounding capacitor 6, while a signal VIN is applied thereto through a switch circuit 9, the voltage VO of the capacitor is compared with a reference voltage VS, and is outputted VOUT. At this time, delay time of the voltage VOUT to the voltage VIN is indicated by the expression TD=NCR(VS/VR), and dispersion of delay time TD is limited by CR. Moreover when respective largenesses are signated as gate oxide film thickness of the FET by TOX, permittivity thereof by epsilonOX (dispersed according to impurity concentration), permittivity of the semiconductor by epsilonO, channel width by W, and length by L, the expression R=L/muWVRX(TOX/epsilonOX), C=epsilonOWL(epsilonOX/TOX) can be effected, and results in the expression TD=N(epsilonO/muXL )XVS/V R, the primary factors of dispersion are excluded totally, and wave form shaping and delay of a pulse can be realized having high precision.