MANUFACTURE OF THIN FILM READ ELEMENT

PURPOSE:To build high-precision, transparent electrodes separatedly located on an Se-Te-As thin film by the lift-off method without damaging the photoconductive thin film. CONSTITUTION:Fine belt-shaped electrodes 3-1,...3-n are formed of Cr-Au on an optically polished glass substrate 2 to be coated...

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Bibliographic Details
Main Author TAKENOUCHI MUTSUO
Format Patent
LanguageEnglish
Published 14.07.1983
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To build high-precision, transparent electrodes separatedly located on an Se-Te-As thin film by the lift-off method without damaging the photoconductive thin film. CONSTITUTION:Fine belt-shaped electrodes 3-1,...3-n are formed of Cr-Au on an optically polished glass substrate 2 to be coated with an approximately 4mum- thick gelatine film 11. Photoengraving is effected whereafter the gelatine film 11 is retained only in the gaps between transparent electrodes 5-1,...5-n. Then an Se-Te-As photoconductive layer 4 thinner than the film 11 is applied to the entire surface for the formation of 0.1-0.3mum-thick ITO transparent electrodes 5-1,... 5-n. The entirety is then placed in hot water, whereby the gelatine film 11 melts away for the completion of a thin film image sensor provided with some separated transparent electrodes 5. The transparent electrodes thus produced are of high precision, and the photoconductive film is left free of damages.
Bibliography:Application Number: JP19820000063