PHOTOSENSITIVE DEVICE

PURPOSE:To improve the photosensitive efficiency of a photosensitive device by laminating photoelectric conversion layers made of amorphous semiconductor in an incident direction, sequentially decreasing optically forbidden band width from the light incident side and photoelectrically converting the...

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Bibliographic Details
Main Authors NAKANO SHIYOUICHI, KUWANO YUKINORI, TAKEUCHI MASARU
Format Patent
LanguageEnglish
Published 12.07.1983
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Summary:PURPOSE:To improve the photosensitive efficiency of a photosensitive device by laminating photoelectric conversion layers made of amorphous semiconductor in an incident direction, sequentially decreasing optically forbidden band width from the light incident side and photoelectrically converting the lights of various wavelengths. CONSTITUTION:The first transparent electrode 11 which is made of indium tin oxide or the like is formed on a transparent insulating substrate 10 made of glass or the like, a plurality of photoelectric conversion layers 12, 13, 14 which are made of amorphous semiconductor are sequentially laminated on the electrode 11, and the second electrode 1 which is made of aluminum or the like is formed on the layer 14. Then, the optically forbidden band widths EOP of the layers 12, 13, 14 are sequentially decreased from the light incident side. A semiconductor photodetector 1 which is constructed as described above and a resistor are connected in parallel with each other, and a voltage detector is connected to both ends of the resistor, thereby forming a photosensitive device.
Bibliography:Application Number: JP19810212941