FIELD-EFFECT TYPE SEMICONDUCTOR DEVICE

• Main Author: NEMOTO YASUO
• Format: Patent
• Language: English
• Published: 09.07.1983
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To increase the breaking withstand voltage for the titled semiconductor device by a method wherein a high density layer is formed under the source and drain electrode located on the area excluding an active layer, or an insulating film is interposed between the source and drain electrode and...