MAGNETORESISTANCE EFFECT TYPE HEAD

• Main Author: HORIBATA SHINJI
• Format: Patent
• Language: English
• Published: 09.07.1983
• Subjects: INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; PHYSICS

PURPOSE:To improve reproduction efficiency by arranging an insulating layer which is thinner than an insulating layer between magnetic shielding bodies for clamping a magnetoresistance effect thin film on the opposite end surface to the facing surface of the magnetoresistance effect thin film with a magnetic recording carrier, and reducing the magnetic resistance between the magnetoresistance effect thin film and a ferromagnetic material and thus increasing the amount of signal magnetic flux piercing the magnetoresistance effect thin film. CONSTITUTION:The ferromagnetic material 10 made of a nonconductive ferromagnetic material such as ferrite adhered onto a magnetic shield layer 3 by vapor sputtering has a step 10a on the side where it faces the magnetic recording carrier 1, and an insulating layer 4, magnetoresistance effect element 5, insulating layer 6, and magnetic shield layer 7 are adhered thereupon successively. The adhered insulating layer 4 is thinned at the step part to allow the rear edge B of the thin film 5 and the ferromagnetic material 10 to come much closer, and consequently they are considered nearly to short-circuit magnetically, decreasing the magnetic resistance between the thin film 5 and ferromagnetic material 10. Therefore, almost all of signal magnetic flux entering the thin film 5 at a part A reachs a part B and pierces the ferromagnetic material 10 and magnetic shield layers 3 and 7, so the leakage of magnetic flux to the magnetic shield layers before the part B is reduced.