SEMICONDUCTOR PHOTO-COUPLER

• Main Authors: NAKANO SHIYOUICHI, KUWANO YUKINORI, TAKEUCHI MASARU
• Format: Patent
• Language: English
• Published: 25.06.1983
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To output the signals of a predetermined level or higher from a light-receiving element, and to obtain AND output to input signals to two light-emitting sources by oppositely arranging the light-emitting sources radiating the light of wavelength regions at the long wavelength side from peak wavelength and the short wavelength side to the light-receiving element. CONSTITUTION:When input signals are fed to the first light-emitting source 6a, luminous wavelength lambdaa thereof is 700nm, the light-emitting source 6a emits light and light transmits a light transmitting insulating substrate 1 and a transparent electrode film 3 and irradiates the opposite light-receiving element 2, but light is absorbed by the N type layer of an amorphous silicon layer 4, and only output Pa at the low level of the predetermined value level Pth or lower is obtained. When input signals are fed to the second light-emitting source 6b, luminous wavelength lambdab thereof is 460nm, on the other hand, the source 6b emits light similarly and light irradiates the light-receiving element 2, reaches the amorphous silicon layer 4 and is absorbed by a P type layer, and output Pb is brought to a level lower than the predetermined level Pth. When both light-emitting sources 6a, 6b are light-emitted simultaneously, however, output acquired from the light-receiving element 2 is the AND of the input signals of the first and second light- emitting sources 6a, 6b because output Po at a level higher than the predetermined level Pth is obtained.