SEMICONDUCTOR PHOTOCOUPLER

PURPOSE:To obtain a logic output signal while inexpensively forming a semiconductor photocoupler by employing as a photodetector an emergency crystal semiconductor when the photocoupler is formed of a plurality of light emitting elements for individually emitting lights upon reception of an input si...

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Bibliographic Details
Main Authors NAKANO SHIYOUICHI, KUWANO YUKINORI, TAKEUCHI MASARU
Format Patent
LanguageEnglish
Published 16.06.1983
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Summary:PURPOSE:To obtain a logic output signal while inexpensively forming a semiconductor photocoupler by employing as a photodetector an emergency crystal semiconductor when the photocoupler is formed of a plurality of light emitting elements for individually emitting lights upon reception of an input signal and a plurality of photodetectors for receiving the light from the elements and converting the light into electric signals, and electrically coupling at least two of the photodetectors. CONSTITUTION:A glass insulating substrate 1 having a patterned transparent electrode film 7 on the front surface is put in a plasma reaction furnace, and an amorphous Si layer 8 having a PIN junction is formed from the substrate 1 to the film 7 with SiH4 gas, B2H6 gas and further PH3 gas. Then, an Al metal electrode film 9 is covered on the layer 8, thereby forming the first and second photodetectors 3a, 3b, which are connected in series with each other, and the first and second light emitting elements 2a, 2b are independently formed on the opposite surface of the substrate 1 oppositely to the photodetectors, and the entirety is sealed with a molding unit 12.
Bibliography:Application Number: JP19810200469