ETCHING DEVICE

• Main Author: OOTA MASATOSHI
• Format: Patent
• Language: English
• Published: 28.05.1982
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE:To automate a series of process and improve productivity and yield by injecting an etching soln., washing water and a drying gas successively to the etching surface held downward by oscillating spray nozzles. CONSTITUTION:Spray nozzles 3 are oscillated with respect to the etching surfaces of substrates 2 to be etched held by a holding jig 1. First, an etching soln. is sprayed for a certain time by opening a solenoid valve 4a, then the valve 4a is closed and washing liquid is sprayed by opening 4b. Further, the valve 4b is closed and a drying gas is sprayed by opening 4c. A series of these processes are controlled automatically. According to this method, the etching surfaces are faced downward, therefore, there is no accumulation of the etching soln. and washing liquid and the quality of etching is stabilized.