HIGH-SPEED SWITCHING FOR HIGH-POWER TRANSISTOR

PURPOSE:To prevent the overdriving of the giant transistor (GTR) by a method wherein the base current running to the GTR is biased by a diode when it is turned to ON. CONSTITUTION:The diode D1B is connected in between one end of a current limiting resistor r6 and the collector C, which is the termin...

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Bibliographic Details
Main Authors ODA ETSUJI, KABEI NORIHIRO, NAKANISHI YOSHINORI
Format Patent
LanguageEnglish
Published 17.05.1982
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Summary:PURPOSE:To prevent the overdriving of the giant transistor (GTR) by a method wherein the base current running to the GTR is biased by a diode when it is turned to ON. CONSTITUTION:The diode D1B is connected in between one end of a current limiting resistor r6 and the collector C, which is the terminal on the driving power supply of the GTR1. When the GTR1 is turned to ON, the base current iB is biased by the diode D1B in proportion to the decrease in the electric potential of the collector C of the GTR1. At this time, when the GTR1 is switched to ON from OFF position, the diode D1A determines the starting point of time when the current is applied.
Bibliography:Application Number: JP19800152434