SEMICONDUCTOR MEMORY CELL

PURPOSE:To attain a purpose for making miniaturize a structure by decreasing the number of contacts per cell of a 2T cell. CONSTITUTION:A p-channel MOS transistor is constituted of a p type first electrifying electrode 11 connected to a write line WW', a gate electrode 12, an n type substrate a...

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Bibliographic Details
Main Author SUZUKI SHIYUNICHI
Format Patent
LanguageEnglish
Published 09.12.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PURPOSE:To attain a purpose for making miniaturize a structure by decreasing the number of contacts per cell of a 2T cell. CONSTITUTION:A p-channel MOS transistor is constituted of a p type first electrifying electrode 11 connected to a write line WW', a gate electrode 12, an n type substrate area 13 to which reference potential is supplied, and a p type second electrifying electrode 16 being in an electrically floating state. Also, an n-channel MOS transistor is constituted of an n type second electrifying electrode 13 to which reference potential is supplied, an n type first electrifying electrode 14 connected to a readout line RR', a gate electrode 15, and a p type substrate area 16 being in an electrically floating state. The n type electrode 13 and the p type electrode 16 are used in common in both MOS transistors. In a 2T cell of this structure, binary information is stored by charging and discharging various capacities formed between the p type electrode 16 and its circumferential electrode.
Bibliography:Application Number: JP19810086208