SEMICONDUCTOR DEVICE HAVING INTEGRATED INJECTION LOGIC STRUCTURE

• Main Authors: AOKI TOSHIO, SUZUKI KOUJI, ITOU TAKAO, KOMATSU SHIGERU
• Format: Patent
• Language: English
• Published: 06.12.1982
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain a device maintaining the initial characteristics without being influenced by mechanical distortion by a method wherein the basic cell of an I L is incorporated in either of the crystal planes (100), (110), (911), (811), (511) of an Si substrate and a base layer is provided in the predetermined axial direction. CONSTITUTION:A P type resistance layer 12 is arranged on an Si chip 11 with an angle of 45 deg. on (100) plane respectively and stress sigma1not equal to sigma2 is applied, then the piezo coefficients of R2, R4 are almost zero. Therefore, when the resistance layer 12 is made in the chip 11 along the axis or the equivalent axis at the (100) plane, the resistance value becomes constant without inducing mechanical distortion. Now when the current direction flowing into the base of a longitudinal NPN driver inkected from the lateral P-N-P injector of an I L is formed in the axis direction or the equivalent axis direction at (100), (110) planes and in the axis direction inclined by 45 deg. from the axis or the equivalent axis direction at each plane of (911), (811), (511), the fan out current amplification characteristics of a multicollector will not vary at distortion under assembly and the I L maintaining the initial characteristics can be obtained.