SEMICONDUCTOR CIRCUIT

PURPOSE:To operate a p-channel and an n-channel under an insulated condition even if these channels are in contact with each other by arranging the n-channel transistor between high electric potential input and output terminals and the p- channel transistor between low electric potential input and o...

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Bibliographic Details
Main Authors SUZUKI YASOJI, EGAWA HIDEHARU
Format Patent
LanguageEnglish
Published 24.11.1982
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To operate a p-channel and an n-channel under an insulated condition even if these channels are in contact with each other by arranging the n-channel transistor between high electric potential input and output terminals and the p- channel transistor between low electric potential input and output terminals respectively. CONSTITUTION:A transistor T21 is an n-channel type MOS transistor and a transistor T22 is a p-channel type MOS transistor. In a figure, 21a shows an n type region prepared along the longitudinal direction and 21b shows a p type region prepared in the same manner. Wiring 22 is prepared for an electric power source VDD along the lateral direction and wiring 23 is prepared for an electric power source VSS. Gate wiring 24 and output wiring 25 are provided on a sapphire substrate 26.
Bibliography:Application Number: JP19810075176