SEMICONDUCTOR DEVICE

• Main Authors: KURODA SHIGEO, KAWAJI MIKINORI, ANZAI AKIO
• Format: Patent
• Language: English
• Published: 16.11.1982
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent the breaking of an electrode material coated at a stage, and to obtain the device having uniform characterisitcs in excellent reproducibility by growing an Si layer with a comparatively easy inclination in the gaseous phase up to the section of an SiO2 layer from a section between an Si3N4 layer and the SiO2 layer. CONSTITUTION:An N<+> collector extracting layer 8 is formed selectively to an N<-> layer 3 isolated by SiO2 6, and Si 9a and poly Si 9b are stacked selectively. When the Si3N4 film 10 is shaped onto the Si 9a and Si 11a and poly Si 11b are stacked, the inclination of a window section on the film 10 is easy. The surface is coated with a BSG12, and a P type graft base 13 is formed annularly through thermal diffusion. The layers 11 are removed selectively through etching, and coated with SiO2 14, the film 10 is removed, a P base 17 is formed through the implantation 16 of B ions and N<+> emitter 19 through the implantation 18 of As ions, and an electrode is attached. Since the emitter electrode 20 is not broken at stages and the Si layer can be formed uniformly through growth in the gaseous phase at that time, characteristics are equal, and the device having high reliability can be shaped in excellent reproducibility.