TRANSISTOR

PURPOSE:To reduce chip area and to increase current capacity by a method wherein many round or oval-shaped contact regions on a base region are arranged in insular shape in an emitter region and emitter electrodes are provided on most of the whole surface of the emitter region. CONSTITUTION:An mesh-...

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Bibliographic Details
Main Authors NOZAKI TSUTOMU, TANAKA TADAHIKO
Format Patent
LanguageEnglish
Published 08.11.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce chip area and to increase current capacity by a method wherein many round or oval-shaped contact regions on a base region are arranged in insular shape in an emitter region and emitter electrodes are provided on most of the whole surface of the emitter region. CONSTITUTION:An mesh-shaped emitter region 22 is provided on the whole surface on a base region located in the collector region 20 of an Si substrate and contact regions 23... in the base region are formed in round or oval shape and are arranged in insular shape by completely surrounding by the emitter region. Emitter electrodes 24 ohmically contact with most of the whole surface of the emitter region 22 and after covering the emitter electrodes 24 with an insulator 25, matrix base electrodes 26 are provided through electrode holes provided on each contact region 23 in the base region 21. In this way, the areas of the contact regions in the base region are reduced and the area of the emitter region is increased to reduce chip area and current capacity is increased.
Bibliography:Application Number: JP19810066346