RESISTANCE DEVICE

PURPOSE:To eliminate the influence by input voltage by a method wherein the source of a first conductivity-type MISFET and that of a second conductivity- type MISFET are connected each other and each drain of the MISFETs is also connected and one gate is connected to an input terminal and the other...

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Bibliographic Details
Main Authors SUZUKI YASOJI, TANAKA TERUAKI
Format Patent
LanguageEnglish
Published 08.11.1982
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To eliminate the influence by input voltage by a method wherein the source of a first conductivity-type MISFET and that of a second conductivity- type MISFET are connected each other and each drain of the MISFETs is also connected and one gate is connected to an input terminal and the other gate to an output terminal to compose a resistance device. CONSTITUTION:The first diffusion electrode 10 of an N channel MISFETQ5 and the third diffusion electrode 13 of a P channel MISFETQ6 are connected each other and the second diffusion electrode 11 of the Q5 and the fourth diffusion electrode 14 of the Q6 are connected each other. In addition to the above connections, the connection 16 of the Q5 gate electrode 12, electrodes 10 and 13 is connected to an input terminal 2 and the connection 17 of the Q6 gate electrode 15 and electrodes 11 and 14 is connected to an output terminal 3 to form a resistance device. In this way, a resistance device unperturbed by input voltage can be formed, and application to an amplifier circuit such as a crystal oscillator or the like will have no influence upon phase attenuation amount and amplification factor.
Bibliography:Application Number: JP19820039425