MANUFACTURE OF THIN SILICON FILM

• Main Authors: ARIMOTO YOSHIHIRO, IHARA MASARU
• Format: Patent
• Language: English
• Published: 04.10.1982
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain easily and accurately a thin Si fulm having a large area while increasing the strength by forming a thin Si film on a magnesia spinel crystal layer by epitaxial growth and by etching the crystal layer. CONSTITUTION:A magnesia spinel crystal layer 2 is fored on an Si substrate 1 by vapor phase growth, and on the layer 2 a single crystal Si layer 3 is formed by thermally decomposing monosilane (SiH4) with a silicon epitaxial device. A photoresist film 4 having a prescribed pattern is then formed on the layer 3. Using the patterned film 4 as a mask the layer 3 is etched with a mixed soln. of hydrofluoric acid and nitric acid to form a prescribed pattern, and this substrate is dipped in a concd. acid. The layer 2 is dissolved, yet the layer 3 is etched with a mixed soln. of hydrofluoric acid and nitric acid to form a prescribed pattern, and this substrate is dipped in a concn. acid. The layer 2 is dissolved, yet the layer 3 is left without causing dissolution, so a thin film of an Si single crystal having a large area is obtd. easily.