HEAT SENSITIVE RECORDING HEAD

PURPOSE:To reduce the secular change in electrical resistance, by forming a thin film heat generating resistor body with an intermetallic compound. CONSTITUTION:On a substrate 1 constituted by an insulator such as a glazed alumina plate, the thin film heat generting resistor body 2 comprising the in...

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Bibliographic Details
Main Authors KITA YOSHIAKI, ANDOU HISASHI
Format Patent
LanguageEnglish
Published 04.10.1982
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Summary:PURPOSE:To reduce the secular change in electrical resistance, by forming a thin film heat generating resistor body with an intermetallic compound. CONSTITUTION:On a substrate 1 constituted by an insulator such as a glazed alumina plate, the thin film heat generting resistor body 2 comprising the intermetallic compound is formed. A conductor 3 which conducts a current through said resistor body 2, and a protecting layer 4 are provided thereon. Since the intermetallic Al compound is protected by the fine oxide film formed by selective oxidation of Al, oxidation resistance is high and excellent. Since it is desirable for other metals to have a melting point of 1,300 deg.C or higher, aluminized nickel (Ni3Al, NiAl, and Ni2Al2), aluminized cobalt (CoAl and Co2Al3), aluminized titanium (TiAl), aluminzed zirconium (ZrAl and ZrAl2), aluminized tantalum (TaAl2), and the like are used as the intermetallic Al compound.
Bibliography:Application Number: JP19810046464