PRODUCTION OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent the leaks or the like between two elements which are sufficiently isolated from each other, by filling with an insulating layer a cavity which is formed by a partial removal of a magnesia spinel layer. CONSTITUTION:An N type Si single crystal layer 5A is formed on an Si substrate...

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Bibliographic Details
Main Author ARIMOTO YOSHIHIRO
Format Patent
LanguageEnglish
Published 02.10.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent the leaks or the like between two elements which are sufficiently isolated from each other, by filling with an insulating layer a cavity which is formed by a partial removal of a magnesia spinel layer. CONSTITUTION:An N type Si single crystal layer 5A is formed on an Si substrate 1. The Si single crystal layer 5A is provided with a low resistance layer at the bottom of an island surrounded by V-shaped MgO.Al2O3 layer 3 and has a predetermined conductivity. Then, the substrate 1 is immersed in a mixture liquid of hot phosphoric acid and hot concentrated sulfuric acid. Since the layer 3 is dissolved easily while the substrate 1 is not dissolved substantially, a cavity is formed in the space which has been occupied by the layer 3. The layer 3 is not dissolved perfectly but remains in the botton of the cavity. Then, an SiO2 layer 12 is formed in the cavity and on the substrate 1. Consequently, the SiO2 film is spread to the left and right along the inner surface of the cavity, so that the thickness of the insulating film for isolating the elements is apparently increased to improve the dielectric strength of the isolation between the elements.
Bibliography:Application Number: JP19810045107