SEMICONDUCTOR DEVICE

PURPOSE:To increase the cut off frequency of a semiconductor device by effectively utilizing the region directly under the active region of a transistor and deleting a P-N junction region having larger capacity of insulators of non-active region as much as possible, thereby reducing the effective ca...

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Bibliographic Details
Main Author SAKURAI HIROMI
Format Patent
LanguageEnglish
Published 11.09.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To increase the cut off frequency of a semiconductor device by effectively utilizing the region directly under the active region of a transistor and deleting a P-N junction region having larger capacity of insulators of non-active region as much as possible, thereby reducing the effective capacity. CONSTITUTION:An oxidized film 2 having more than two holes and a polysilicon 17 are formed on the main surface of a semiconductor substrate 1. In this case, an oxidized film 18 is formed at the inside of one hole, and the polysilicon 17 is deivided on a semiconductor substrate 1. One of the divided polysilicon 17 is used as a base electrode, and other polysilicon 17 is used as an emitter electrode. An oxidized film is not formed at the other hole, but the polysilicon 17 is used as the collector electrode as it is. Externally connecting electrodes 14-16 are formed at the respective electrodes 17.
Bibliography:Application Number: JP19810032983