PHOTOETCHING MASK

PURPOSE:To form straight resist patterns faithfully on a semiconductor substrate by forming mask patterns to the corrected shapes by which deformatons on level differences or boundaries of substrate mateials are corrected. CONSTITUTION:A field oxide film 2 is formed on a silicon substrate 1, and fur...

Full description

Saved in:
Bibliographic Details
Main Authors IWAI HIROSHI, NAKASE MAKOTO
Format Patent
LanguageEnglish
Published 27.08.1982
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE:To form straight resist patterns faithfully on a semiconductor substrate by forming mask patterns to the corrected shapes by which deformatons on level differences or boundaries of substrate mateials are corrected. CONSTITUTION:A field oxide film 2 is formed on a silicon substrate 1, and further an oxide film 3 is grown on element regions, after which a polycrystalline silicon film 4 is deposited over the entire surface. Next, a radiation resist film 6 is coated on the film 4 having the level difference 5 corresponding to the boundary between the film 2 and 3. In the stage of forming resist patterns on the film 6 by using a photoetching mask 21, the Cr film pattern 232 of the mask 21 corresponding to the thinner of the thickness of the film 6 on the right side of the level difference 5 of the film 6 is formed wide on one side of the glass substrate 22 of the mask 21 and the pattern 231 corresponding to the right side of the level difference 5 is formed narrow, so that the resist pattern near the level differnece 5 forms a straight pattern 10' having no deformations.
Bibliography:Application Number: JP19810023863