PRODUCTION METHOD OF VERTICALLJUNCTION TYPE FIELDDEFFECT TRANSISTOR

PURPOSE:To reduce ON Resistance of channel, through enlarging the pressure-proof of vertical type JFET.

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Bibliographic Details
Main Author KOBAYASHI SADAO
Format Patent
LanguageEnglish
Published 18.11.1976
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce ON Resistance of channel, through enlarging the pressure-proof of vertical type JFET.
Bibliography:Application Number: JP19750056109