ACTIVE MATRIX SUBSTRATE

PROBLEM TO BE SOLVED: To provide a low cost and high performance TFT(thin film transistor) by enabling elimination of a source wiring forming process. SOLUTION: A metallic film is formed and a gate wiring 7, source wiring 9, a gate electrode, a source electrode, and a drain electrode are formed of a...

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Bibliographic Details
Main Author SHIBUYA TSUKASA
Format Patent
LanguageEnglish
Published 09.04.1999
Edition6
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PROBLEM TO BE SOLVED: To provide a low cost and high performance TFT(thin film transistor) by enabling elimination of a source wiring forming process. SOLUTION: A metallic film is formed and a gate wiring 7, source wiring 9, a gate electrode, a source electrode, and a drain electrode are formed of a same material simultaneously. The gate wiring 7 is formed to be discontinuous with the source wiring 9 at their interconnecting part, but can be brought into a conductive state by being electrically connected with a bridge wiring via contact holes 8. Moreover, since a gate insulating film is formed between the gate wiring 7 and the source wiring 9, it is possible to keep an insulating state between them.
Bibliography:Application Number: JP19970259719