MANUFACTURE OF SEMICONDUCTOR OPTICAL ELEMENT

• Main Authors: YAMANAKA NOBUMITSU, ARAKAWA TOMOSHI, NISHIKATA KAZUAKI, KASUKAWA AKIHIKO
• Format: Patent
• Language: English
• Published: 30.03.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor photoelement with flat surface of substrate excluding mesa shape, when the mesa shape is formed by etching the laminated structure of a compound semiconductor layer whereon a film is formed by a selective region growing method. SOLUTION: A mesa type semiconductor optical element is formed by etching the laminated structure of a compound semiconductor layer formed using a selective region forming method in this semiconductor optical element manufacturing method. An etching stopping layer 14, which controls the progress of etching when the mesa type semiconductor optical element is formed, is formed on a compound semiconductor substrate 10 or on a buffer layer 12 of the compound semiconductor substrate. Then, compound semiconductor laminated structures 20, 22 and 24 are formed on the etching stopping layer 14 or on a compound semiconductor layer 16 grown on the etching stopping layer 14 using a selective region growing method, and the progress of etching for formation of mesa is controlled by the etching stopping layer 14.