HEAT-DISSIPATING SPACER

• Main Authors: NISHIKAWA MASATO, SAWA HIROAKI
• Format: Patent
• Language: English
• Published: 30.03.1999
• Edition: 6
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; BASIC ELECTRIC ELEMENTS; BLASTING; CHEMISTRY; COMPOSITIONS BASED THEREON; DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OFGENERAL APPLICATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL PROCESSES OF COMPOUNDING; HEAT EXCHANGE IN GENERAL; HEATING; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; WEAPONS; WORKING-UP

PROBLEM TO BE SOLVED: To improve high flexibility and high heat conduction by including a silicon solidified material of specific vol.% and specifying a ratio of particles whose average particle diameter of silicon nitride is a specific value or less. SOLUTION: Flexibility of the heat-dissipating spacer is adjusted by crosslinking density formed by addition reaction and a filling amount of silicon nitride. A ratio of silicone solidified material is 40 to 60 vol.% in the heat- dissipating spacer, preferably 45 to 55 vol.%. Heat-conductive filler is silicon nitride, wherein its average particle diameter is 4 to 16 μm with a ratio of particles of 1.5 μm or less ranging from 10 to 20%. A ratio of particles of 48 μm or more is preferably less than 30%. Thus even if the heat-dissipating spacer is pushed against a circuit substrate with heat-generating electronic components mounted, a stress may be reduced, while efficient heat dissipation can be done with good adhesion kept even for a highly dense circuit substrate with the heating electronic components mounted.