MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device comprising a semiconductor layer having high field effect mobility. SOLUTION: After forming a polycrystalline silicon film 3 on a transparent insulation substrate 1, laser beam is irradiated to the polycrystalline sili...

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Bibliographic Details
Main Authors SOTANI NAOYA, AYA YOICHIRO, NAKAHARA YASUO, NODA TOMOYUKI, HAMADA HIROYOSHI, ABE HISASHI
Format Patent
LanguageEnglish
Published 16.03.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device comprising a semiconductor layer having high field effect mobility. SOLUTION: After forming a polycrystalline silicon film 3 on a transparent insulation substrate 1, laser beam is irradiated to the polycrystalline silicon film 3. The polycrystalline silicon film 3 is heat-treated under the temperature capable of smoothing its rough surface. The crystallinity of the polycrystalline silicon film 3 is improved by irradiating laser beam to the polycrystalline silicon film 3, and the roughness of the surface of the polycrystalline silicon film 3 is lowered by a successive heat-treatment. The field effect mobility of the polycrystalline silicon film 3 is increased.
Bibliography:Application Number: JP19970345084