GAS-SEALED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device even at the tempera ture rise time, by eliminating drop of a breakdown voltage in a semiconductor device, wherein a semiconductor chip is contained in a package. SOLUTION: As the sealed gas in a package, the gas including the ha...

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Bibliographic Details
Main Author TAKANO TETSUMI
Format Patent
LanguageEnglish
Published 16.03.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device even at the tempera ture rise time, by eliminating drop of a breakdown voltage in a semiconductor device, wherein a semiconductor chip is contained in a package. SOLUTION: As the sealed gas in a package, the gas including the halogen element especially fluorine having the large insulation intensity is used, and the pressure reduced state is obtained. For example, when the sealing gas in the package is made to be SF6 and the pressure in sealing is made to be in the range of 0.015-0.08 MPa, the surface dielectric strength becomes larger than the device, wherein conventional N2 is sealed. Therefore, the improvement of dielectric strength and the shortening of the insulating dimenssion as the semiconductor device can be realized. Even at the upper limit temperature, for example, at 120 deg.C at an ordinary semiconductor, the pressure in the package does not become larger than the pressure of external atmosphere, and the expansion of the package does not occur.
Bibliography:Application Number: JP19970231996