SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

• Main Authors: EGUCHI KOHEI, MIZUO YUURI
• Format: Patent
• Language: English
• Published: 16.03.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enable flat formation without unevenness caused on a surface of a trench-type element separation region, by performing thermal treatment on a first insulation film formed in a trench to make it highly dense, and by performing thermal treatment on a second insulation film embedded in a recess corresponding to the trench to make it highly dense. SOLUTION: In forming an element separation region 10, after a trench is filled with a silicon oxide film 6, thermal treatment is performed, thereby making the silicon oxide film 6 highly dense. In addition, after another silicon oxide film 8 is formed on the silicon oxide film 6 and a butting part 7 is completely filled, thermal treatment is performed on the silicon oxide film 8 to make it highly dense. Therefore, a laminated state in the vicinity of the butting part 7 where filling in the trench 4 is insufficient can be made to be highly dense. Further, filling of the two silicon oxide film layers 6, 8 in the vicinity of the butting part 7 can be more rigid. Thus, a semiconductor device with electric characteristics improved can be manufactured.