SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF

• Main Authors: NOZAKI HIDETOSHI, IIDA YOSHINORI
• Format: Patent
• Language: English
• Published: 26.02.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To lessen a picture element in size keeping a photodiode low in dark current. SOLUTION: This device is composed of unit picture elements two- dimensionally arranged on a P-type Si substrate. A photodiode 3 for photoelectric conversion, a storage diode 5 which stores signal change obtained through the photodiode 3, a reset transistor which resets the stored signal charge, an amplifying transistor which is modulated by the stored signal charge, and an address transistor which reads out a signal current from the amplifying transistor are provided to the unit pixel. In this case, a P<+> -type impurity region 101 which is of the same conductivity-type with the substrate and higher than it in impurity concentration is formed in the region of the unit pixel where the amplifying transistor is formed, and the amplifying transistor is formed in the P<+> -type impurity region 101.