METHOD FOR DETECTING END POINT OF PLASMA ETCHING AND PLASMA ETCHING DEVICE

• Main Authors: ITO YOSHINAO, DENDA ATSUSHI
• Format: Patent
• Language: English
• Published: 24.12.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma etching device for further accurately detecting the end point of plasma etching, and a method for detecting the end point of plasma etching. SOLUTION: Radio frequency Hz waves generated from a radio frequency generating device 5 are propagated through a wiring 30, and the radio frequency Hz waves are impressed to a cathode 9 in a plasma chamber 1. Thus, a plasma 11 is generated in the plasma chamber 1, and a semiconductor wave 12 is selectively etched by the plasma. The voltage and currents of the radio frequency Hz waves running through the wiring 30 are measured by an RF probe 8. Then, the end point of the plasma etching is judged based on the previously changed one among the voltage and currents by a judging device 15.