METHOD AND DEVICE FOR TREATING SAMPLE

• Main Authors: MIYAUCHI TAKEOKI, HONGO MIKIO, MIZUKOSHI KATSURO
• Format: Patent
• Language: English
• Published: 30.11.1999
• Edition: 6
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a stage which can reduce the occupying area of a semiconductor treating device for large-diameter wafer and the manufacturing cost of semiconductors and a semiconductor treating device using the stage. SOLUTION: A semiconductor treating device is provided with a stage which moves with high accuracy, while a wafer 100 is mounted on the stage and is different at least at the center of stroke from those of X and Y-stages 11 and 12, rotating shaft of that of a θ-stage 13, or an processing section 15 from those of the other stages, sets coordinate axes on the wafer 100, and conducts treatment by moving a chip 101 to one of the first to fourth quadrants divided by the coordinate axes. As a result, the strokes of the X and Y-stages 11 and 12 requiring high accuracy can be completed, when the stages 11 and 12 with about a half of the diameter of the wafer 100. Consequently, not only the size of the stage itself but also the capacity of the vacuum chamber for an FIB machining device, laser CVD device, etc., can be provided with the stage.