ORGANIC EL ELEMENT

PROBLEM TO BE SOLVED: To provide an Al-Li alloy element with high brightness, high efficiency, long life, and high display quality by providing a hole injection electrode, an electron injection electrode, at least one organic layer between these electrodes, forming the electron injection electrode b...

Full description

Saved in:
Bibliographic Details
Main Authors DAIHISA KAZUHISA, NAKATANI KENJI, KOBORI ISAMU, ARAI MICHIO, MORI MASAMI
Format Patent
LanguageEnglish
Published 30.11.1999
Edition6
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide an Al-Li alloy element with high brightness, high efficiency, long life, and high display quality by providing a hole injection electrode, an electron injection electrode, at least one organic layer between these electrodes, forming the electron injection electrode by sputtering process, and including the specified amount of Li to improve the film forming capability and adhesion on the interface between the electron injection electrode and the organic layer. SOLUTION: The content of Li is specified to 0.4-14 at.%. The pressure of sputtering gas in the sputtering process is limited to 0.1-5 Pa. By adjusting the pressure of the sputtering gas in this region, an AL-Li alloy having the Li content of the desirable range is easily obtained. By varying the pressure of the sputtering gas during formation of a film, an electron injection electrode having concentration gradient of Li is easily obtained. The sputtering is preferable to be a DC sputtering process. As magnetic field intensity, the magnetic flux density B on a target is preferable to be around 500-2,000 Gauss.
Bibliography:Application Number: JP19980132771