DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER AND SINGLE MODE LIGHT SOURCE

PROBLEM TO BE SOLVED: To realize a semiconductor laser which is excellent in single mode yield and both good and stable in characteristics, by a method wherein a current block is arranged so as to form a secondary grating. SOLUTION: Current block layers 10 are provided at a regular interval between...

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Bibliographic Details
Main Authors TAKAHASHI YOSHIO, MORI HIROSHI, TOUMON RYOICHI, KIKUKAWA TOMOYUKI
Format Patent
LanguageEnglish
Published 16.11.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To realize a semiconductor laser which is excellent in single mode yield and both good and stable in characteristics, by a method wherein a current block is arranged so as to form a secondary grating. SOLUTION: Current block layers 10 are provided at a regular interval between an optical confinement layer 5 and a P-type clad layer 6, whereby a grating is formed. Furthermore, an N electrode 11 and a P electrode 12 are provided for the formation of a gain-coupled distribution feedback(GC-DFB) laser. In a GC-DFB laser, the current block layers 10 are each 240 nm wide and arranged at a regular interval of 480 nm. This structure functions as a secondary grating and is more uniform in characteristics than a primary grating, whereby a distributed feedback semiconductor laser excellent in single mode yield and both good and stable in characteristics can be obtained.
Bibliography:Application Number: JP19980124604