WAFER END FACE PROCESSING APPARATUS

• Main Author: OISHI TAKAHIRO
• Format: Patent
• Language: English
• Published: 29.10.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an apparatus which processes the end face of a semiconductor wafer and efficiently performs feeding and discharging of a processing liquid to and from the end face, thereby improving the productivity and always ensuring constant etching and polishing. SOLUTION: One end of a belt 1 for processing the end face of a wafer is made to be dipped in an enchant 6 or the like and while the belt 1 is rotated at a high speed, it is caused to abut on the end face of the wafer by a roller 2 to process that end face. At this time, the belt 1 is vibrated continuously by a moving roller 4 to effectively use the surface of the belt 1 and evenly process the top and back of the inclined surface of the wafer's end face. The roller 2 is manipulated by a magnetic coil to be pressed against the orientation flat portion of the wafer with the same pressure as that applied to the other peripheral portion, thereby conducting uniform processing.