ANODE STRUCTURE OF VACUUM DEPOSITION APPARATUS

• Main Authors: SAKAMI TOSHIYUKI, FURUYABU YUKIO
• Format: Patent
• Language: English
• Published: 05.10.1999
• Edition: 6
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide an anode structure of a vacuum deposition apparatus which is capable of preventing the formation of an insulating film on an anode section surface and is improved to obviate a failure accident of an insulating sleeve or the like. SOLUTION: A shielding gas introducing path 40 is disposed between the outer peripheral surface of the anode section 10 and the inner peripheral surface of a shield block 30. The insulating sleeve 20 is mounted between the upper anode plate 14 of the anode section 10 and the shield block 30. A shielding gas introducing hole 46 for introducing the shielding gas into the space 16 of the anode section 10 from the shielding gas introducing path 40 is formed within the anode section 10. An O-ring 49 for airtightly separating the shielding gas introducing path 40 above and below is interposed between the inlet of the shielding gas introducing hole 46 opened at the outer periphery of the anode section 10 and the insulating sleeve 20.