METHOD FOR GROWING SEMICONDUCTOR CRYSTAL
PROBLEM TO BE SOLVED: To easily remove a protective film and a deposit on the protective film, by making the thickness of a first protective film deposited on a first semiconductor crystal layer smaller than the thickness of the first protective film deposited on a region other than the first semico...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
29.01.1999
|
Edition | 6 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To easily remove a protective film and a deposit on the protective film, by making the thickness of a first protective film deposited on a first semiconductor crystal layer smaller than the thickness of the first protective film deposited on a region other than the first semiconductor crystal layer. SOLUTION: As a first protective film 3 deposited on a first semiconductor crystal layer 2, SiNx is deposited to approximately 300 nm by a plasma enhanced chemical vapor deposition method. The first protective film 3 is partly etched by using ammonium fluoride, thus providing an aperture 4 at a predetermined position. Then, the first protective film 30 is etched to approximately 30 nm and is thus made thinner than the first protective film 3 deposited on a region other than the first semiconductor crystal layer 2. This thinned portion is made a protective film 8. At this point, single crystal GaAs5 as a second semiconductor crystal layer is grown in the aperture 4, and polycrystal GaAs6 is deposited on the first protective film 3. |
---|---|
Bibliography: | Application Number: JP19970179777 |