METHOD FOR GROWING SEMICONDUCTOR CRYSTAL

• Main Author: KUZUHARA TORU
• Format: Patent
• Language: English
• Published: 29.01.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To easily remove a protective film and a deposit on the protective film, by making the thickness of a first protective film deposited on a first semiconductor crystal layer smaller than the thickness of the first protective film deposited on a region other than the first semiconductor crystal layer. SOLUTION: As a first protective film 3 deposited on a first semiconductor crystal layer 2, SiNx is deposited to approximately 300 nm by a plasma enhanced chemical vapor deposition method. The first protective film 3 is partly etched by using ammonium fluoride, thus providing an aperture 4 at a predetermined position. Then, the first protective film 30 is etched to approximately 30 nm and is thus made thinner than the first protective film 3 deposited on a region other than the first semiconductor crystal layer 2. This thinned portion is made a protective film 8. At this point, single crystal GaAs5 as a second semiconductor crystal layer is grown in the aperture 4, and polycrystal GaAs6 is deposited on the first protective film 3.