SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

• Main Authors: SUZUKI NAOYA, KOSAKA TAKASHI, YASUDA MASAAKI, KANEDA AIZO, TANAKA TOSHIAKI
• Format: Patent
• Language: English
• Published: 17.09.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for reducing the voids of an adhesive material layer, improving follow-up ability and an adhesion property, and substantially improving reflow resistance. SOLUTION: In this method of manufacturing the semiconductor device by the process of coating an adhesive material 4 for adhering a semiconductor element on the surface of a substrate 1 for loading the semiconductor element, loading the semiconductor element 5 on the substrate 1, adhering the semiconductor element 5 and the adhesive material 4 by applying pressure and making the adhesive material 4 flow, and covering at least the semiconductor element 5 with a sealing material 7, for the method of coating the adhesive material 4 for adhering the semiconductor element on the surface of the substrate 1 for loading the semiconductor element, the coating amount of the adhesive material 4 per unit area is reduced stepwise or continuously from the center of an adhesive material coating part to an outer side, and the adhesive material 4 is coated on the surface of the substrate 1 in an island shape in plural independent areas. Thus, since the voids for accumulating moisture while keeping this semiconductor device are not present, the defects of crack and peeling, etc., in a reflow process are reduced and the reflow resistance is improved.