SCHOTTKY GATE FET AND MONOLITHIC TYPE MICROWAVE INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide a monolithic type microwave integrated circuit having integrated on the same substrate a high output MESFET(metal semiconductor field effect transistor) and a low noise MESFET. SOLUTION: A porous film 204 is etched in the inversely tapered shape for a resist mask 214...

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Bibliographic Details
Main Authors IZUMI MOICHI, SUMIYA KOICHI, NAKANO HIROBUMI, OKU YUUKI
Format Patent
LanguageEnglish
Published 27.08.1999
Edition6
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a monolithic type microwave integrated circuit having integrated on the same substrate a high output MESFET(metal semiconductor field effect transistor) and a low noise MESFET. SOLUTION: A porous film 204 is etched in the inversely tapered shape for a resist mask 214 and an unporous film 202 is etched in the tapered shape for the resist mask 214. In the recess etching of two stages recess type MESFET, the first recess etching is performed using a pattern 216 for etching the laminated structure of unporous film and porous film depending on the resist mask and a pattern 218 for etching and opening only the unporous film depending on the resist mask.
Bibliography:Application Number: JP19980030099