ETCHING METHOD FOR SILICON FILM

• Main Authors: MUTO MAKOTO, ONODA TOSHIYASU, KASAI MASARU
• Format: Patent
• Language: English
• Published: 17.08.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an etching method of a silicon film capable of etching the silicon film inside a hole with good controllability and obtaining a smooth etching surface, without prolonging the processing time. SOLUTION: This method for etching a silicon film 11 formed on the surface of a mask 10 formed on a base layer 13 and in the inside of a hole 14 formed on the base layer 13 by using the mask 10 is provided with the etching process of a first stage for using gas, for which the gas containing fluorine atoms and oxygen gas are mixed as process gas and etching and removing a silicon film 11a at a part other than the inside of the hole 14 and the etching process of a second stage for using the process gas, whose ratio of the oxygen gas is higher than that of the process gas used in the etching processing of the first stage and etching and digging a silicon film 11b inside the hole 14.