METHOD FOR CLEANING TREATING CHAMBER AND DEVICE THEREFOR

• Main Authors: SUGIURA TORU, TOKUNAGA KYOJI, NAGURA MASAHIKO
• Format: Patent
• Language: English
• Published: 17.08.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To efficiently execute cleaning for a treating chamber and an exhaust tube in a working treating device executing working treatment such as film formation, etching or the like. SOLUTION: A treating camber 10 executing CVD(chemical vapor deposition) treatment is fed with an etching gas as a treating gas G via a valve V2 and an inlet pipe 12 from a gas source 16, and on the other hand, exhaust is executed via an exhaust pipe 14 and a valve V1 from the treating chamber 10. By the reaction between the etching gas and contaminants R in the treating chamber 10 and the exhaust pipe 14, the contaminants R are removed. A control device 22 controls etching conditions such as the gas flow rate based on the output signals S1 to S4 of a plurality of sensors K1 to K4 placed on the plurality of places in a passage reaching from the treating chamber 10 to the exhaust pipe 14, and after the detection of the end point of the reaction at the plurality of places based on the output signals S1 to S4 , it executes the control so as to stop the reaction.