PRODUCTION OF SILICON SINGLE CRYSTAL AND APPARATUS FOR PRODUCTION THEREFOR

• Main Author: YOSHIZAWA TAKESHI
• Format: Patent
• Language: English
• Published: 06.07.1999
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To enable the supply of a completely melted melt to a melting zone in a floating zone melting method and to obtain a silicon single crystal having high purity and high quality by impressing a magnetic field on a silicon melt formed by heating and melting gradual polycrystalline silicon and supplying this silicon melt to the melting zone. SOLUTION: The magnetic field 6 is preferably impressed horizontally on the silicon melt 2. The silicon melt 2 is held in a crucible 3 and the magnetic field 6 is preferably formed in the region inclusive of an aperture 6 disposed at the bottom end of the crucible 3 in order to supply the silicon melt 2 from the crucible 3 to the melting zone 80. A magnetic pole is, for example, an electromagnet and is constituted so as to control the magnitude of the magnetic field by changing the impressed voltage by a voltage varying device. The silicon melt 2 is maintained in the contactless state with the inside wall surface of the crucible 3 holding the silicon melt 2. The crucible 3 does not preferably come into contact with the melting zone 80.